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Número de pieza | C2714 | |
Descripción | NPN Transistor - 2SC2714 | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de C2714 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
• Low noise figure: NF = 2.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 30 V
Emitter-base voltage
VEBO 4 V
Collector current
IC 20 mA
Base current
IB 4 mA
Collector power dissipation
PC 100 mW
S-MINI
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
JEDEC
TO-236
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
SC-59
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 12 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 1 mA
Cre
fT
Cc・rbb’
NF
Gpe
VCB = 6 V, f = 1 MHz
VCE = 6 V, IC = 1 mA
VCB = 6 V, IE = −1 mA, f = 30 MHz
VCC = 6 V, IE = −1 mA, f = 100 MHz,
Figure 1
Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 100 to 200
Min Typ. Max Unit
⎯ ⎯ 0.5 μA
⎯ ⎯ 0.5 μA
40 ⎯ 200 ⎯
⎯ 0.70 ⎯
pF
⎯ 550 ⎯ MHz
⎯ ⎯ 30 ps
⎯ 2.5 5.0 dB
17 23 ⎯ dB
1 2010-08-24
1 page 2SC2714
BASE
5 2010-08-24
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet C2714.PDF ] |
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C2713 | NPN Transistor - 2SC2713 | Toshiba |
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