|
|
PDF K2614 Data sheet ( Hoja de datos )
| Número de pieza | K2614 | |
| Descripción | MOSFET ( Transistor ) - 2SK2614 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K2614 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
2SK2614
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2614
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4 V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 0.032 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 13S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
50
50
±20
20
50
40
150
−55~150
V
V
V
A
A
W
°C
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
3.125
125
°C / W
°C / W
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
1 2006-11-17
1 page  
2SK2614
SINGLE PULSE
Pulse width tw (S)
SAFE OPERATING AREA
300
100
ID max (pulse)*
50
30 ID max (continuous)
10
1 ms*
5
DC OPERATION
3
Ta =25°C
100 μs*
1
* Single pulse
0.5 Ta=25°C
0.3 Curves must be derated linearly
with increase in temperature.
VDSS max
0.1
0.3 1 3 10 30
100
Drain-source voltage VDS (V)
300
5 2006-11-17
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2614.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K2610 | MOSFET ( Transistor ) - 2SK2610 |  Toshiba Semiconductor |
| K2611 | 9A, 900V, N-Channel MOSFET, 2SK2611 | Toshiba Semiconductor |
| K2611B | Silicon N-Channel MOSFET |  Winsemi |
| K2613 | MOSFET ( Transistor ) - 2SK2613 | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |