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PDF T2G4003532-FL Data sheet ( Hoja de datos )
| Número de pieza | T2G4003532-FL | |
| Descripción | GaN RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
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T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB): 28 W at 3.5 GHz
• Linear Gain: >16 dB at 3.5 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
ECCN
T2G4003532-FL EAR99
T2G4003532-
FS/FL-EVB1
EAR99
Description
Packaged part
Flangeless
2.7-3.5 GHz
Evaluation Board
Datasheet: Rev - 12-30-13
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 150 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev - 12-30-13
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Information
All dimensions are in millimeters.
T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev - 12-30-13
© 2013 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet T2G4003532-FL.PDF ] | |
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