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What is T2G6003028-FL?

This electronic component, produced by the manufacturer "TriQuint Semiconductor", performs the same function as "GaN RF Power Transistor".


T2G6003028-FL Datasheet PDF - TriQuint Semiconductor

Part Number T2G6003028-FL
Description GaN RF Power Transistor
Manufacturers TriQuint Semiconductor 
Logo TriQuint Semiconductor Logo 


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T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Applications
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Frequency: DC to 6 GHz
Output Power (P3dB): 25 W at 5.6 GHz
Linear Gain: >14 dB at 5.6 GHz
Operating Voltage: 28 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G6003028-FL is a 30W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
VD / RF OUT
VG / RF IN
Source
Ordering Information
Part
ECCN
T2G6003028-FL EAR99
T2G6003028-FL-
EVB1
EAR99
T2G6003028-FL-
EVB2
EAR99
Description
Packaged part
Flanged
5.4 – 5.9 GHz
Evaluation Board
1.3 – 1.9 GHz
Evaluation Board
Datasheet: Rev A 12-03-13
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

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T2G6003028-FL equivalent
T2G6003028-FL
30W, 28V DC – 6 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 28 V, IDQ = 200 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev A 12-03-13
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com


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Featured Datasheets

Part NumberDescriptionMFRS
T2G6003028-FLThe function is GaN RF Power Transistor. TriQuint SemiconductorTriQuint Semiconductor

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