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PDF FQD8P10TM_F085 Data sheet ( Hoja de datos )
| Número de pieza | FQD8P10TM_F085 | |
| Descripción | 100V P-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FQD8P10TM_F085 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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December 2010
FQD8P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
D
D
D-PAK
GS
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD8P10TM_F085 Rev. C1
1
G
S
Ratings
-100
-6.6
-4.2
-26.4
± 30
150
-6.6
4.4
-6.0
2.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 2.84 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS 10%
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
FQD8P10TM_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FQD8P10TM_F085.PDF ] | |
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