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부품번호 | FDS9431A_F085 기능 |
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기능 | P-Channel 2.5V Specified MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
FDS9431A_F085
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
• DC/DC converter
• Power management
• Load switch
• Battery protection
February 2010
tm
Features
• -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V
RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
• Fast switching speed.
• High density cell design for extremely low RDS(ON).
• High power and current handling capability.
• Qualified to AEC Q101
• RoHS Compliant
D
D
D
D
5
6
SO-8
G
SS
S
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
RqJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9431A
FDS9431A_F085
13’’
©2010 Fairchild Semiconductor Corporation
FDS9431A_F085 Rev. A
1
4
3
2
1
Ratings
-20
±8
-3.5
-18
2.5
1.2
1.0
-55 to +150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
Typical Characteristics (continued)
5
ID= -1.6A
4
3
VDS= -5V
-15V
2
1
0
0246
Qg, GATE CHARGE (nC)
8
Figure 7. Gate Charge Characteristics.
50
10 RD S( ON ) LI M IT
3
0 .5
VVGSG S== --44..55VV
SISNINGGLLEE PPUULLSSEE
0. 05 RRθJAθTJTAA=A=A==1122235555°°°°CCCC/W/W
100 us
1ms
10 ms
100 ms
1s
10
DC
s
0.01
0 .1
0 .3
12
5 10
30
- VD S , DR A IN -SO UR C E V OLTA GE (V)
Figure 9. Maximum Safe Operating Area.
2000
1000
Ciss
500
200
Cos s
100
50
0.1
f = 1 MHz
VG S = 0 V
0.2
0.5 1
2
5
-V DS , D R A IN T O S OU R CE V OLTA GE (V)
Cr s s
10 20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA= 125oC/W
40 TA= 25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
00. 05
D = 0.5
0.2
0.1
0 .0 5
0 .0 2
0.0 1
S i n g le P ul se
00. 02
00. 01
0 .00 0 1
00. 01
0.01
0.1
t 1, TIME (s e c )
1
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS9431A_F085 Rev. A
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS9431A_F085 | P-Channel 2.5V Specified MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |