|
|
PDF FDS4435BZ_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDS4435BZ_F085 | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDS4435BZ_F085 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
Qualified to AEC Q101
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
25
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ_F085
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
VGS = -10 V
SINGLE PULSE
RTJA = 125 oC/W
TA = 25 oC
10
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
1000
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RTJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Transient Thermal Response Curve
1000
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS4435BZ_F085.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDS4435BZ_F085 | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |