|
|
|
부품번호 | FDS9958_F085 기능 |
|
|
기능 | Dual P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
November 2008
FDS9958_F085
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
Qualified to AEC Q101
RoHS Compliant
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D1
D1
D2
D2 5
D2 6
Q2
4 G2
3 S2
Pin 1
G2
S2
G1
S1
SO-8
D1 7
D1 8
Q1
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-60
±20
-2.9
-12
54
2
1.6
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
40
78
°C/W
Device Marking
FDS9958
Device
FDS9958_F085
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
©2008 Fairchild Semiconductor Corporation
FDS9958_F085 Rev.A
1
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -2.9A
8
VDD = -20V
6
VDD = -30V
4
VDD = -40V
2
0
0 5 10 15
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
20
2000
1000
Ciss
100 Coss
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
60
4
3
2 TJ = 25oC
TJ = 125oC
1
0.01 0.1
1
10
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
100
3.0
2.5
2.0
VGS = -4.5V
1.5
VGS = -10V
1.0
RθJA = 78oC/W
0.5
0.0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
150
20
10 0.1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
1 10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1ms
10ms
100ms
1s
10s
DC
100 200
200
100 VGS = -10V
10
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1
0.5
10-3 10-2 10-1 100 101 102
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
103
©2008 Fairchild Semiconductor Corporation
FDS9958_F085 Rev.A
4
www.fairchildsemi.com
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDS9958_F085.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS9958_F085 | Dual P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |