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부품번호 | JCS740B 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JilinSino | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS740
主要参数 MAIN CHARACTERISTICS
ID 10 A
VDSS 400 V
Rdson(@Vgs=10V) 0.54 Ω
Qg 60 nC
封装 Package
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 35pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 35pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS740S-O-S-N-B
JCS740B-O-B-N-B
JCS740C-O-C-N-B
JCS740F-O-F-N-B
JCS740S
JCS740B
JCS740C
JCS740F
封装
Package
TO-263
TO-262
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
否 NO
否 NO
包 装 器件重量
Packaging Device Weight
条管 Tube
条管 Tube
条管 Tube
条管 Tube
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201008B
1/12
R
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=200V,ID=10A,RG=25Ω
(note 4,5)
VDS =320V ,
ID=10A
VGS =10V (note 4,5)
JCS740
- 20 50 ns
- 80 170 ns
- 125 260 ns
- 85 180 ns
- 60 71 nC
- 7.4 - nC
- 27 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 10 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 40 A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=10A
- 1.5 - V
反向恢复时间
Reverse recovery time
trr VGS=0V, IS=10A
反向恢复电荷
Reverse recovery charge
Qrr dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
- 330 - ns
- 3.57 - μC
项目
Parameter
符号
Symbol
最大
Max
JCS740S/B/C
JCS740F
单位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.93
2.86 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1 : Pulse width limited by maximum junction
temperature
2 : L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201008B
4/12
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS740S/B/C
JCS740
1
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 Z θ J C(t)= 0 .9 3 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
P DM
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
Transient Thermal Response Curve
For JCS740F
10
D = 0 .5
1
0 .2
0 .1
0 .0 5
0 .1 0 .0 2
N o te s :
1 Z θ J C(t)= 2 .8 6 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
0 .0 1
1 E -5
0 .0 1
s in g le p u ls e
P DM
t1
t2
1 E -4
1 E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
版本:201008B
7/12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
JCS740 | N-CHANNEL MOSFET | JilinSino |
JCS740B | N-CHANNEL MOSFET | JilinSino |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |