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부품번호 | JCS740C 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JilinSino | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS740C
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 10 A
VDSS 400 V
Rdson(@Vgs=10V) 0.54 Ω
Qg 19.7nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 22pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 22pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
JCS740VC-O-V-N-B
JCS740RC-O-R-N-B
JCS740RC-O-R-N-A
JCS740SC-O-S-N-B
JCS740RC-O-S-N-A
JCS740BC-O-B-N-B
JCS740CC-O-C-N-B
JCS740FC-O-F-N-B
JCS740VC
JCS740RC
JCS740RC
JCS740SC
JCS740SC
JCS740BC
JCS740CC
JCS740FC
IPAK
DPAK
DPAK
TO-263
TO-263
TO-262
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
否 NO
包 装 器件重量
Packaging Device Weight
条管 Tube
条管 Tube
编带 Reel
条管 Tube
编带 Reel
条管 Tube
条管 Tube
条管 Tube
0.35 g(typ)
0.30 g(typ)
0.30 g(typ)
1.37 g(typ)
1.37 g(typ)
1.71 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201601B
1/14
R JCS740C
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
延迟时间 Turn-Off delay time
下降时间 Turn-Off Fall time
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=200V,ID=10A,RG=25Ω
(note 4,5)
VDS =320V ,
ID=10A
VGS =10V (note 4,5)
- 20 50 ns
- 80 170 ns
- 125 260 ns
- 85 180 ns
- 19.7 25.6 nC
- 7.38 - nC
- 4.66 - nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 10 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 40 A
正向压降
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=10A
- 1.5 - V
反向恢复时间
Reverse recovery time
trr VGS=0V, IS=10A
反向恢复电荷
Reverse recovery charge
Qrr dIF/dt=100A/μs (note 4)
热特性 THERMAL CHARACTERISTIC
- 217 - ns
- 2.45 - μC
最大
项目
符号
Max 单 位
Parameter
Symbol JCS740
VC/RC
JCS740
SC/BC/CC
JCS740FC
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.68
0.93
2.86 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient Rth(j-A)
110
62.5
62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1 : Pulse width limited by maximum junction
temperature
2 : L=7.9mH, IAS=10A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201601B
4/14
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS740VC/RC
1
JCS740C
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 Z θ J C(t)= 0 .6 8 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
P DM
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
Transient Thermal Response Curve
For JCS740SC/BC/CC
10
1
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 Z θ J C(t)= 0 .9 3 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
P DM
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
Transient Thermal Response Curve
For JCS740FC
10
D = 0 .5
1
0 .2
0 .1
0 .0 5
0 .1 0 .0 2
N o te s :
1 Z θ J C(t)= 2 .8 6 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
0 .0 1
1 E -5
0 .0 1
s in g le p u ls e
P DM
t1
t2
1 E -4
1 E -3
0 .0 1
0 .1
1
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
10
版本:201601B
7/14
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ JCS740C.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
JCS740 | N-CHANNEL MOSFET | JilinSino |
JCS740B | N-CHANNEL MOSFET | JilinSino |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |