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PDF 2SK1697 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1697 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK1697 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for DC – DC converter, motor drive, power switch, solenoid drive
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
21
3
4
Note: Marking is “EY”.
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)*1
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
Ratings
60
±20
0.5
1.5
0.5
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 May 11, 2006 page 1 of 6
1 page  
2SK1697
Reverse Drain Current vs.
Source to Drain Voltage
1.0
Pulse Test
0.8
0.6
0.4
10 V
0.2 5 V
VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Rev.2.00 May 11, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK1697.PDF ] | |
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