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D5N40 PDF 데이터시트 ( Data , Function )

부품번호 D5N40 기능
기능 HFD5N40
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D5N40 데이터시트, 핀배열, 회로
July 2005
HFD5N40 / HFU5N40
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ = 1.27 Ω
ID = 3.4 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 13 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD5N40
1
2
3
HFU5N40
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
3.4
2.15
13.6
±30
510
3.4
4.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
SEMIHOW REV.A0,July 2005




D5N40 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
100
10-1
100
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 2.25 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-5
Notes :
1. Zθ JC(t) = 2.78 /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,July 2005

4페이지










D5N40 전자부품, 판매, 대치품
Package Dimension
TO-252
6.6±0.2
5.35±0.15
2.3±0.1
0.5±0.05
0.8±0.2
0.6±0.2
2.3typ
2.3typ
1.2±0.3
0.05+-00..015
0.5+-00..015
SEMIHOW REV.A0,July 2005

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