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PDF STP5N120 Data sheet ( Hoja de datos )
| Número de pieza | STP5N120 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | STMicroelectronics | |
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STP5N120
N-channel 1200 V, 2.7 Ω, 4.7 A TO-220
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS RDS(on)
ID
PW
STP5N120 1200 V < 3.5 Ω 4.7 A 160 W
t(s)■ 100% avalanche tested
■ Extremely high dv/dt capability
uc■ ESD improved capability
rod■ New high voltage benchmark
■ Gate charge minimized
lete PApplication
o■ Switching applications
ObsDescription
) -The SuperMESH™ series is obtained through an
t(sextreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
ucpushing on-resistance significantly down, special
dcare is taken to ensure a very good dv/dt
rocapability for the most demanding applications.
PSuch series complements ST full range of high
Obsoletevoltage Power MOSFETs.
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STP5N120
Marking
5N120
Package
TO-220
Packaging
Tube
November 2009
Doc ID 13530 Rev 2
1/12
www.st.com
12
1 page  
STP5N120
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM
VSD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 4.7 A, VGS=0
-
-
4.7 mA
18.8 A
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.7 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 16)
760
-5
14
ns
µC
A
trr
Qrr
t(s)IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.7 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C(see
Figure 16)
c1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
880
-7
160
ns
µC
A
roduTable 9. Gate-source Zener diode
PSymbol
Parameter
Test conditions
Min Typ. Max Unit
leteBVGSO Gate-source breakdown voltage Igs ± 1mA, (open drain) 30
V
bsoThe built-in-back Zener diodes have specifically been designed to enhance not only the
Odevice’s ESD capability, but also to make them safely absorb possible voltage transients that
-may occasionally be applied from gate to source. In this respect the Zener voltage is
t(s)appropriate to achieve an efficient and cost-effective intervention to protect the device’s
Obsolete Producintegrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 13530 Rev 2
5/12
5 Page 
STP5N120
5 Revision history
Revision history
Table 10. Revision history
Date
Revision
21-May-2007
1
02-Nov-2009
2
Changes
First release
Document status promoted from preliminary data to datasheet.
Updated mechanical data.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 13530 Rev 2
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STP5N120.PDF ] | |
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