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PDF CS7N60FA9HD Data sheet ( Hoja de datos )
| Número de pieza | CS7N60FA9HD | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Discrete Devices | |
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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS7N60FA9HD
General Description：
CS7N60FA9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features：
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:21nC)
z Low Reverse transfer capacitances(Typical:15pF)
z 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
VESD(G-S)
TJ，Tstg
TL
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)
600
7
30
1.10
Rating
600
7
4.5
28
±20
550
54
10.4
5.0
100
0.80
3000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2008
1 page  
Huajing Discrete Devices
○R CS7N60FA9HD
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
10
⎡
I = I 25 ⎢
⎣
150 − TC
125
⎤
⎥
⎦
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 7A
ID=3.5A
ID= 1.75A
41
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Figure 7 Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25 ℃
1.1
12
0
4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=3.5A
2
1 VGS=10V
1.5
0.9
1
0.8 0.5
0.7
0
12345
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2008
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS7N60FA9HD.PDF ] | |
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