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부품번호 | RFN20TJ6S 기능 |
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기능 | Super Fast Recovery Diode | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
Super Fast Recovery Diode
RFN20TJ6S
Data Sheet
lSeries
Standard Fast Recovery
lApplication
General rectification
lFeatures
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
f3.1±0.1
10.2±0.2
4.5±0.1
2.6±0.1
lStructure
RFN20
TJ6S 1
2
1.4±0.2
Cathode Anode
2.6±0.1
2.54±0.1
0.83±0.1
5.08±0.1
0.6±0.1
ROHM : TO220ACFP
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load Tc=50°C
20
A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
150
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=20A
Tj=25°C 1.0
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
Forward recovery time
Forward recovery voltage
trr IF=0.5A, IR=1A, Irr=0.25×IR -
IF=20A, VR=400V, dIF/dt=-100A/ms -
tfr IF=20A, dIF/dt=100A/ms, -
VFp
VFR=1.1xVFmax
-
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
1.25
1.1
0.1
7
40
85
300
3.2
-
-
Max. Unit
1.55 V
-V
10 mA
200 mA
60 ns
140 ns
- ns
-V
7.5 °C/W
2.5 °C/W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.A
RFN20TJ6S
lElectrical characteristic curves
Data Sheet
70
60 D.C.
50 D = 0.5
half sin wave
40
D = 0.2
30 D = 0.1
20
10
0
0
Tj = 150°C
5 10 15 20 25 30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
35
40
35
IF=2IO
30
IF=IO
25
20
IF=IO /2
15
10
5
0
0
VR = 400V
IO = 20A
Tj = 100°C
200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-IRp CHARACTERISTICS
250
VR = 400V
IO = 20A
200 Tj = 100°C
150
IF=IO
IF=2IO
100
50
IF=IO /2
0
0 200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-trr CHARACTERISTICS
1800
1600
IF=2IO
1400
1200
1000
IF=IO
800
600
400
200
0
0
IF=IO /2
VR = 400V
IO = 20A
Tj = 100°C
200 400 600 800 1000 1200
RATE OF CHANGE OF CURRENT : -di/dt(A/ms)
di/dt-Qrr CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.04 - Rev.A
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ RFN20TJ6S.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
RFN20TJ6S | Super Fast Recovery Diode | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |