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PDF BD14000EFV-C Data sheet ( Hoja de datos )
| Número de pieza | BD14000EFV-C | |
| Descripción | Cell Balance LSI of 4 to 6 Series Power Storage Element Cells | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
Simple design with built-in self-controlled cell balance features circuit
Cell Balance LSI of 4 to 6 Series Power
Storage Element Cells for Automotive
BD14000EFV-C
General Description
BD14000EFV is a LSI IC designed as a self-controlled
cell balancer. It has a built-in shunt-type power storage
element balancer function that can respond to 4 to 6
cells. All the functions necessary in a cell balancer are
built-in making power storage element cell balancing
possible only in this LSI.
This chip can be used for electric double layer
capacitors (EDLC) with cell detection voltage range of
2.4V to 3.1V and power storage capacitors which is
important for cell balancers with similar electrical
characteristics
Key Specifications
Input Voltage Range：8.0V to 24.0V
Cell Voltage Detection Range：2.4V to 3.1V
Cell Voltage Detection Accuracy：③1％(Max. at
25°C)
Shunt Switch ON Resistance：1Ω(Typ.)
Operating Temp. Range ：-40°C to +105°C
Package
HTSSOP-B30
W (Typ) x D (Typ) x H (Max)
10.00mm x 7.60mm x 1.00mm
It has a built-in multiple over-voltage detection function
and can also detect abnormal mode such as any
characteristic deterioration in cells.
Also, application-dependent operation can be set since
enable control is possible.
Features
AEC-Q100 qualified(Note1)
All EDLC cell balancer functions are integrated on
a single chip
Self- controlled EDLC balance function
Adopts shunt resistance method for simple
balancing
4 to 6 cell series connection ready
Multiple chip series connection is possible
Built-in over-voltage detection flag output
Detection voltage can be set
(Note1 : Grade2)
Applications
Renewable energy power storage for Automotive,
Production machinery, Building machinery, etc.
UPS and other devices that stabilizes power
supplies
HTSSOP-B30
Typical Application Circuit
Figure 1 Typical application circuit
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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BD14000EFV-C
Datasheet
Electrical Characteristics (Unless otherwise specified VCC=15V Ta=25°C)
Parameter
Symbol Min Typ Max
Circuit Current
VCC circuit current when ON
IVCC
40 80
VCC circuit current when standby
Cn(n=1~6) pin circuit current
when ON
Cn(n=5,6) pin circuit current
when standby
Cn(n=1~4) pin circuit current
when standby
Cell Voltage Detection
Cell Balance Start Detection
Voltage Range
Cell Balance Start
Detection Accuracy1
Cell Balance Start
Detection Accuracy2
Over- Voltage Detection 1
Detection Voltage1
Over- Voltage Detection 1
Detection Voltage2
Over- Voltage Detection 1
Detection Accuracy
Over- Voltage Detection 2
Detection Voltage1
Over- Voltage Detection 2
Detection Voltage2
Over- Voltage Detection 2
Detection Accuracy
Built-in Oscillator Frequency
VREG
Output Voltage
ON
IVCC
ICN
OFF56
OFF
VCB
VCB
ERR1
VCB
ERR2
VOVLO
1-1
VOVLO
1-2
VOVLO1
ERR
VOVLO2
-1
VOVLO2
-2
VOVLO2
ERR
fosc
VREG
-
-
2.4
－
－
－
－
－
－
－
－
20
3.6
25
20
1
0
－
－
－
VCB
+0.15
VCB
+0.25
－
VCB
+0.3
VCB
+0.5
－
40
4.3
50
40
8
5
3.1
③1
③2
－
－
③2
－
－
③2
80
5.0
Unit Conditions
ENIN=H
µA During cell balance start
voltage non-detection
µA ENIN=L
ENIN=H,Vcn-Vcn-1=2.5V
µA During cell balance start
voltage non-detection
µA ENIN=L, Vcn-Vcn-1=2.5V
µA ENIN=H,Vcn-Vcn-1=2.5V
V Set by VSET0～2 pin
%
% Ta=-40～105°C
V
Set by VSET0～2 pin
and OVLOSEL=L
V
Set by VSET0～2 pin
and OVLOSEL=H
% Ta=-40～105°C
V
Set by VSET0～2 pin
and OVLOSEL=L
V
Set by VSET0～2 pin
and OVLOSEL=H
% Ta=-40～105°C
kHz
V Io=10mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
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22.Jun.2015 Rev.002
5 Page 
BD14000EFV-C
Datasheet
When using the power storage element for connection of over 8 cells, series connection of this chip is possible. Enable
control (ENIN pin control) and flag output (VO_OVLO1, VO_OVLO2, VO_OK pin output) are also available in the series
connection by using the following application circuit.
Figure 10. Application circuit for BD14000EFV-C series connection
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
11/18
TSZ02201-0Q3Q0JZ00270-1-2
22.Jun.2015 Rev.002
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet BD14000EFV-C.PDF ] | |
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