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IXDD609CI 데이터시트 PDF




IXYS에서 제조한 전자 부품 IXDD609CI은 전자 산업 및 응용 분야에서
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부품번호 IXDD609CI 기능
기능 9-Ampere Low-Side Ultrafast MOSFET Drivers
제조업체 IXYS
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IXDD609CI 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS DIVISION
IXD_609
9-Ampere Low-Side
Ultrafast MOSFET Drivers
Features
9A Peak Source/Sink Drive Current
Wide Operating Voltage Range: 4.5V to 35V
-40°C to +125°C Extended Operating Temperature
Range
Logic Input Withstands Negative Swing of up to 5V
Matched Rise and Fall Times
Low Propagation Delay Time
Low, 10A Supply Current
Low Output Impedance
Applications
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
Description
The IXDD609/IXDI609/IXDN609 high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. The IXD_609
high-current output can source and sink 9A of peak
current while producing voltage rise and fall times of
less than 25ns. The input is CMOS compatible, and is
virtually immune to latch up. Proprietary circuitry
eliminates cross-conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_609 family
ideal for high-frequency and high-power applications.
The IXDD609 is configured as a non-inverting driver
with an enable, the IXDN609 is configured as a
non-inverting driver, and the IXDI609 is configured as
an inverting driver.
The IXD_609 family is available in a standard 8-pin
DIP (PI); an 8-pin SOIC (SIA); an 8-pin Power SOIC
with an exposed metal back (SI); an 8-pin DFN (D2); a
5-pin TO-263 (YI); and a 5-pin TO-220 (CI).
Ordering Information
Part Number
IXDD609D2TR
IXDD609SI
IXDD609SITR
IXDD609SIA
IXDD609SIATR
IXDD609PI
IXDD609CI
IXDD609YI
IXDI609SI
IXDI609SITR
IXDI609SIA
IXDI609SIATR
IXDI609PI
IXDI609CI
IXDI609YI
IXDN609SI
IXDN609SITR
IXDN609SIA
IXDN609SIATR
IXDN609PI
IXDN609CI
IXDN609YI
Logic
Configuration
IN OUT
EN
IN OUT
IN OUT
Package Type
8-Pin DFN
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
8-Pin SOIC
8-Pin DIP
5-Pin TO-220
5-Pin TO-263
Packing
Method
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Quantity
2000
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
100
2000
100
2000
50
50
50
DS-IXD_609-R06
www.ixysic.com
1




IXDD609CI pdf, 반도체, 판매, 대치품
INTEGRATED CIRCUITS DIVISION
1.5 Electrical Characteristics: TA = 25°C
Test Conditions: 4.5V < VCC < 35V (unless otherwise noted).
Parameter
Input Voltage, High
Input Voltage, Low
Input Current
EN Input Voltage, High
EN Input Voltage, Low
Output Voltage, High
Output Voltage, Low
Output Resistance, High State
Output Resistance, Low State
Output Current, Continuous
Rise Time
Fall Time
On-Time Propagation Delay
Off-Time Propagation Delay
Enable to Output-High Delay Time
(IXDD609 Only)
Disable to High Impedance State Delay Time
(IXDD609 Only)
Enable Pull-Up Resistor
Power Supply Current
Conditions
4.5V < VCC < 18V
4.5V < VCC < 18V
0V < VIN < VCC
IXDD609 only
IXDD609 only
-
-
VCC=18V, IOUT=-100mA
VCC=18V, IOUT=100mA
Limited by package power
dissipation
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
VCC=18V
VCC=18V
-
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
1.6 Electrical Characteristics: TA = - 40°C to +125°C
Test Conditions: 4.5V < VCC < 35V unless otherwise noted.
Parameter
Input Voltage, High
Input Voltage, Low
Input Current
Output Voltage, High
Output Voltage, Low
Output Resistance, High State
Output Resistance, Low State
Output Current, Continuous
Rise Time
Fall Time
On-Time Propagation Delay
Off-Time Propagation Delay
Enable to Output-High Delay Time
Disable to High Impedance State Delay Time
Power Supply Current
Conditions
4.5V < VCC < 18V
4.5V < VCC < 18V
0V < VIN < VCC
-
-
VCC=18V, IOUT=-100mA
VCC=18V, IOUT=100mA
Limited by package power
dissipation
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
VCC=18V, CLOAD=10nF
IXDD609 only, VCC=18V
IXDD609 only, VCC=18V
VCC=18V, VIN=3.5V
VCC=18V, VIN=0V
VCC=18V, VIN=VCC
IXD_609
Symbol
VIH
VIL
IIN
VENH
VENL
VOH
VOL
ROH
ROL
IDC
tr
tf
tondly
toffdly
tENOH
tDOLD
REN
ICC
Minimum
3.0
-
-
2/3VCC
-
VCC-0.025
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typical
-
-
-
-
-
-
-
0.6
0.4
-
22
15
40
42
25
35
200
1
<1
<1
Maximum
-
0.8
±10
-
1/3VCC
-
0.025
1
0.8
±2
35
25
60
60
60
60
-
2
10
10
Units
V
A
V
V
A
ns
k
mA
A
Symbol
VIH
VIL
IIN
VOH
VOL
ROH
ROL
IDC
tr
tf
tondly
toffdly
tENOH
tDOLD
ICC
Minimum
3.3
-
-
VCC-0.025
-
-
-
-
-
-
-
-
-
-
-
-
-
Maximum
-
0.65
±10
-
0.025
2
1.5
±1
40
30
75
75
75
75
2.5
150
150
Units
V
A
V
A
ns
mA
A
4
www.ixysic.com
R06

4페이지










IXDD609CI 전자부품, 판매, 대치품
INTEGRATED CIRCUITS DIVISION
IXD_609
4 Typical Performance Characteristics
Rise Time vs. Supply Voltage
(Input=0-5V, f=10kHz, TA=25ºC)
70
60
CL=10nF
50 CL=5.4nF
40 CL=1.5nF
30
20
10
0
0 5 10 15 20 25 30 35
Supply Voltage (V)
Fall Time vs. Supply Voltage
(Input=0-5V, f=10kHz, TA=25ºC)
60
50
CL=10nF
40
C =5.4nF
L
CL=1.5nF
30
20
10
0
0 5 10 15 20 25 30 35
Supply Voltage (V)
Rise and Fall Times vs. Temperature
(VIN=0-5V, VCC=18V, f=10kHz, CL=2.5nF)
11
10
tr
9
8
7 tf
6
5
-40 -20 0 20 40 60 80 100 120 140
Temperature (ºC)
Rise Time vs. Load Capacitance
70
60
VCC=4.5V
VCC=8V
50 VCC=12V
VCC=18V
40 VCC=25V
30
VCC=30V
VCC=35V
20
10
0
0 2000 4000 6000 8000 10000
Load Capacitance (pF)
Fall Time vs. Load Capacitance
60
VCC=4.5V
50 VCC=8V
VCC=12V
40 VCC=18V
VCC=25V
30 VCC=30V
VCC=35V
20
10
0
0 2000 4000 6000 8000 10000
Load Capacitance (pF)
Propagation Delay vs. Supply Voltage
200 (VIN=0-5V, f=1kHz, CL=5.4nF)
150
100
toffdly
50 tondly
0
0 5 10 15 20 25 30 35
Supply Voltage (V)
Propagation Delay vs. Input Voltage
(V =5V, V =12V, f=1kHz, C =5.4nF)
IN CC
L
180
160
140
tondly
120
100
80
60
toffdly
40
20
0
2 4 6 8 10 12
Input Voltage (V)
Propagation Delay
vs. Temperature
(VCC=18V, f=1kHz, CL=5.4nF)
55
50
toffdly
45
40
tondly
35
30
-40 -20 0
20 40 60 80 100 120 140
Temperature (ºC)
Input Threshold Voltage
vs. Temperature
(VCC=18V, CL=2.5nF)
2.8
2.7
2.6
2.5
2.4 Min VIH
2.3
2.2
2.1
2.0 Max VIL
1.9
-40 -20 0
20 40 60 80 100 120 140
Temperature (ºC)
Input Threshold vs. Supply Voltage
3.5
3.0
Min VIH
2.5
Max VIL
2.0
1.5
1.0
0
5 10 15 20 25 30 35
Supply Voltage (V)
Enable Threshold vs. Supply Voltage
25
20
15 Min VENH
Max VENL
10
5
0
0 5 10 15 20 25 30 35
Supply Voltage (V)
R06 www.ixysic.com
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부품번호상세설명 및 기능제조사
IXDD609CI

9-Ampere Low-Side Ultrafast MOSFET Drivers

IXYS
IXYS

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