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부품번호 | SVF9N90F 기능 |
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기능 | 900V N-CHANNEL MOSFET | ||
제조업체 | Silan Microelectronics | ||
로고 | |||
SVF9N90F/PN_Datasheet
9A, 900V N-CHANNEL MOSFET
DESCRIPTION
SVF9N90F/PN is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF9N90F
SVF9N90PN
Package
TO-220F-3L
TO-3PN
Marking
SVF9N90F
9N90
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2012.05.30
Page 1 of 8
SVF9N90F/PN_Datasheet
TYPICAL CHARACTERISTICS
100
10
1
Figure 1. On-Region Characteristics
Variable
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=10V
VGS=15V
0.1
0.1
Notes:
1.250µS pulse test
2.TC=25°C
1 10 100
Drain-Source Voltage – VDS(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
1.6
1.5 VGS=10V
VGS=20V
1.4
1.3
1.2
1.1
Note: TJ=25°C
1.00 2 4 6 8 10
Drain Current – ID(A)
3500
3000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2500
2000
1500
1000
500
Ciss
Coss
Crss
Notes:
1. VGS=0V
2. f=1MHz
0
0.1 1 10 100
Drain-Source Voltage – VDS(V)
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
0 1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage– VGS(V)
Figure 4. Body Diode Forward Voltage
10V0ariation vs. Source Current and Temperature
Notes:
1.250µS pulse test
2.VGS=0V
10
-55°C
25°C
150°C
1
0.1
0.2
0.4 0.6 0.8 1.0
Source-Drain Voltage– VSD(V)
1.2
Figure 6. Gate Charge Characteristics
12
VDS=720V
10 VDS=450V
VDS=180V
8
6
4
2
Note: ID=9.0A
0
0 5 10 15 20 25 30 35
Total Gate Charge – Qg(nC)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2012.05.30
Page 4 of 8
4페이지 PACKAGE OUTLINE
TO-220F-3L
SVF9N90F/PN_Datasheet
UNIT: mm
TO-3PN
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2012.05.30
Page 7 of 8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ SVF9N90F.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
SVF9N90F | 900V N-CHANNEL MOSFET | Silan Microelectronics |
SVF9N90PN | 900V N-CHANNEL MOSFET | Silan Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |