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PDF KHB4D0N80P1 Data sheet ( Hoja de datos )
| Número de pieza | KHB4D0N80P1 | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=800V, ID=4A
Drain-Source ON Resistance
: RDS(ON)=3.6 @VGS = 10V
Qg(typ.)=25nC
KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB4D0N80P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8 +_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08 +_ 0.3
1.46
1.4 +_ 0.1
1.27 +_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D0N80F1 UNIT
KHB4D0N80P1
KHB4D0N80F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
800
30
4.0 4.0*
16 16*
460
13
4.0
130 43
1.04 0.34
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
0.96
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.9
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
G
S
TO-220AB
KHB4D0N80F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
MILLIMETERS
10.16 +_ 0.2
15.87 +_ 0.2
2.54 +_ 0.2
0.8 +_ 0.1
3.18 +_ 0.1
3.3 +_ 0.1
12.57 +_ 0.2
0.5 +_ 0.1
13.0 MAX
3.23 +_ 0.1
1.47 MAX
1.47 MAX
2.54 +_ 0.2
6.68 +_ 0.2
4.7 +_ 0.2
2.76 +_ 0.2
TO-220IS (1)
KHB4D0N80F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MILLIMETERS
10.0 +_ 0.3
15.0 +_ 0.3
2.70 +_ 0.3
0.76+0.09/-0.05
Φ3.2 +_0.2
3.0 +_ 0.3
12.0 +_ 0.3
0.5+0.1/-0.05
13.6 +_ 0.5
3.7+_ 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
2.54 +_0.1
6.8 +_0.1
4.5+_ 0.2
2.6+_ 0.2
0.5 Typ
TO-220IS
2007. 9. 10
Revision No : 0
1/7
1 page  
KHB4D0N80P1/F1/F2
100
Duty=0.5
Rth
{KHB4D0N80P1}
0.2
10-1 0.1
0.05
0.02
0.01
10-2
Single Pulse
10-5 10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-1 100 101
Square Wave Pulse Duration (sec)
Rth
{KHB4D0N80F1}
100 Duty=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-1 100 101
Square Wave Pulse Duration (sec)
2007. 9. 10
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB4D0N80P1.PDF ] | |
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