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부품번호 | KHB4D0N80F2 기능 |
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기능 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=800V, ID=4A
Drain-Source ON Resistance
: RDS(ON)=3.6 @VGS = 10V
Qg(typ.)=25nC
KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB4D0N80P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8 +_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08 +_ 0.3
1.46
1.4 +_ 0.1
1.27 +_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D0N80F1 UNIT
KHB4D0N80P1
KHB4D0N80F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
800
30
4.0 4.0*
16 16*
460
13
4.0
130 43
1.04 0.34
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
0.96
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.9
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
G
S
TO-220AB
KHB4D0N80F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
MILLIMETERS
10.16 +_ 0.2
15.87 +_ 0.2
2.54 +_ 0.2
0.8 +_ 0.1
3.18 +_ 0.1
3.3 +_ 0.1
12.57 +_ 0.2
0.5 +_ 0.1
13.0 MAX
3.23 +_ 0.1
1.47 MAX
1.47 MAX
2.54 +_ 0.2
6.68 +_ 0.2
4.7 +_ 0.2
2.76 +_ 0.2
TO-220IS (1)
KHB4D0N80F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MILLIMETERS
10.0 +_ 0.3
15.0 +_ 0.3
2.70 +_ 0.3
0.76+0.09/-0.05
Φ3.2 +_0.2
3.0 +_ 0.3
12.0 +_ 0.3
0.5+0.1/-0.05
13.6 +_ 0.5
3.7+_ 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
2.54 +_0.1
6.8 +_0.1
4.5+_ 0.2
2.6+_ 0.2
0.5 Typ
TO-220IS
2007. 9. 10
Revision No : 0
1/7
KHB4D0N80P1/F1/F2
3000
2500
Ciss
C - VDS
VGS = 0V
Frequency = 1MHz
2000
1500
Coss
1000
Crss
500
0
10-1
100 101
Drain - Source Voltage VDS (V)
Safe Operation Area
102 (KHB4D0N80P1)
Operation in this area
is limited by RDS(ON)
101
100µs
100 1ms
10ms
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
100 101
102
DC
103
Drain - Source Voltage VDS (V)
ID - Tj
4
3
2
1
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2007. 9. 10
Revision No : 0
Qg- VGS
12
ID = 4.0A
10
8
6
VDS = 160V
VDS = 400V
VDS = 640V
4
2
0
05
10 15
20 25
Gate - Charge Qg (nC)
30
Safe Operation Area
(KHB4D0N80F1)
Operation in this area
is limited by RDS(ON)
101
100µs
1ms
100
10ms
10-1
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
10-2
100 101
102
100ms
DC
103
Drain - Source Voltage VDS (V)
4/7
4페이지 KHB4D0N80P1/F1/F2
- Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
VDS
RL 90%
VDS VGS 10%
td(on) tr
ton
tf
td(off)
toff
- Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 x VDSS
DUT
driver
10V VGS
VDS
IS
ISD
(DUT)
Body Diode Forword Current
IRM
di/dt
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2007. 9. 10
Revision No : 0
7/7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
KHB4D0N80F1 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KHB4D0N80F2 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |