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PDF KHB4D0N65P Data sheet ( Hoja de datos )
| Número de pieza | KHB4D0N65P | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
VDSS=650V, ID=4A
Drain-Source ON Resistance
: RDS(ON)=3.0 @VGS = 10V
Qg(typ.)=20nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D0N65P KHB4D0N65F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
650
30
4.0 4.0*
16 16*
260
10.6
4.5
106 36
0.85 0.29
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.18
3.47 /W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5 /W
* : Drain current limited by maximum junction temperature.
KHB4D0N65P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KHB4D0N65F
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
D
2007. 3. 26
Revision No : 1
G
S
1/7
1 page  
KHB4D0N65P/F
100
Duty=0.5
Rth
{KHB4D0N65P1}
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
Square Wave Pulse Duration (sec)
Rth
{KHB4D0N65F}
Duty=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
Square Wave Pulse Duration (sec)
2007. 3. 26
Revision No : 1
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB4D0N65P.PDF ] | |
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