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PDF IRFP470 Data sheet ( Hoja de datos )
| Número de pieza | IRFP470 | |
| Descripción | N-Channel Enhancement Mode MegaMOS FET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 470
VDSS = 500 V
ID (cont) = 24 A
RDS(on) = 0.23 Ω
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
24 A
96 A
24 A
30 mJ
5 V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l High commutating dv/dt rating
l Fast switching times
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
2
V
4V
±100 nA
25 µA
250 µA
0.23 Ω
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92605E(5/97)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRFP470.PDF ] | |
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