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D2504 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D2504
기능 2SD2504
제조업체 Panasonic Semiconductor
로고 Panasonic Semiconductor 로고 


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D2504 데이터시트, 핀배열, 회로
Transistors
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Large collector current IC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
15
10
10
5
9
750
150
55 to +150
Note) *: t = 380 µs
Unit
V
V
V
A
A
mW
°C
°C
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5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
fT
Cob
Conditions
IC = 1 mA, IE = 0
IC = 10 µA, IB = 0
VCB = 10 V, IE = 0
VCE = 5 V, IB = 0
VEB = 5 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 2 A
IC = 3 A, IB = 0.1 A
VCB = 6 V, IE = −50 mA, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min
10
10
300
195
Typ Max
0.1
1.0
0.1
800
0.28 0.50
170
45 65
Unit
V
V
µA
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: February 2003
SJC00267DED
1






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