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부품번호 | STP70N10F4 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 18 페이지수
STB70N10F4, STD70N10F4
STP70N10F4, STW70N10F4
N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™
Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Features
Type
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
VDSS
100 V
100 V
100 V
100 V
RDS(on) max
< 0.0195 Ω
< 0.0195 Ω
< 0.0195 Ω
< 0.0195 Ω
ID
65 A
60 A
65 A
65 A
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
3
2
1
TO-247
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
Marking
70N10F4
70N10F4
70N10F4
70N10F4
3
!-V
Package
D²PAK
DPAK
TO-220
TO-247
Packaging
Tape and reel
Tape and reel
Tube
Tube
October 2009
Doc ID 15207 Rev 3
1/18
www.st.com
18
Electrical characteristics
2 Electrical characteristics
STB/D/P/W70N10F4
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
100
V
VDS = max rating
VDS = max rating,TC=125 °C
1 µA
100 µA
VGS = ± 20 V
100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 30 A
0.015 0.0195 Ω
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 80 V, ID = 65 A,
VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
5800
pF
- 300 - pF
190 pF
85 nC
- 20 - nC
25 nC
Test conditions
VDD = 50 V, ID = 30 A
RG = 4.7 Ω VGS = 10 V
(see Figure 15)
VDD = 50 V, ID = 30 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
30 ns
--
20 ns
65 ns
--
20 ns
4/18 Doc ID 15207 Rev 3
4페이지 STB/D/P/W70N10F4
Electrical characteristics
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
BVDSS
(norm)
VGS=0
ID=250µA
AM03170v1
RDS(on)
(mΩ)
15.5
VGS=10V
AM03176v1
1.1 15.0
14.5
1.0 14.0
13.5
0.9
0.8
-75 -25
25 75 100 125 TJ(°C)
13.0
12.5
12.0
0
5 10 15 20 25 30 35 ID(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
VGS
(V)
12 VDD=50V
10 VGS=10V
ID=65A
AM03171v1
C
(pF)
8
1000
6
AM03172v1
Ciss
4
2
0
0 20 40 60 80 100 Qg(nC)
100
0
Coss
Crss
25 50 75 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM03173v1
RDS(on)
(norm)
AM03174v1
1.2 VDS=VGS
ID=250µA
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 TJ(°C)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75
VGS=10V
ID=30A
-25 25 75
125 TJ(°C)
Doc ID 15207 Rev 3
7/18
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STP70N10F4 | N-CHANNEL MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |