Datasheet.kr   

STW70N10F4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STW70N10F4
기능 N-CHANNEL MOSFET
제조업체 STMicroelectronics
로고 STMicroelectronics 로고 


전체 18 페이지

		

No Preview Available !

STW70N10F4 데이터시트, 핀배열, 회로
STB70N10F4, STD70N10F4
STP70N10F4, STW70N10F4
N-channel 100 V, 0.015 , 60 A, STripFET™ DeepGATE™
Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Features
Type
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
VDSS
100 V
100 V
100 V
100 V
RDS(on) max
< 0.0195
< 0.0195
< 0.0195
< 0.0195
ID
65 A
60 A
65 A
65 A
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
Application
Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
3
2
1
TO-247
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB70N10F4
STD70N10F4
STP70N10F4
STW70N10F4
Marking
70N10F4
70N10F4
70N10F4
70N10F4
3
!-V
Package
D²PAK
DPAK
TO-220
TO-247
Packaging
Tape and reel
Tape and reel
Tube
Tube
October 2009
Doc ID 15207 Rev 3
1/18
www.st.com
18




STW70N10F4 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STB/D/P/W70N10F4
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
100
V
VDS = max rating
VDS = max rating,TC=125 °C
1 µA
100 µA
VGS = ± 20 V
100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 30 A
0.015 0.0195
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 80 V, ID = 65 A,
VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
5800
pF
- 300 - pF
190 pF
85 nC
- 20 - nC
25 nC
Test conditions
VDD = 50 V, ID = 30 A
RG = 4.7 VGS = 10 V
(see Figure 15)
VDD = 50 V, ID = 30 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min. Typ. Max. Unit
30 ns
--
20 ns
65 ns
--
20 ns
4/18 Doc ID 15207 Rev 3

4페이지










STW70N10F4 전자부품, 판매, 대치품
STB/D/P/W70N10F4
Electrical characteristics
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
BVDSS
(norm)
VGS=0
ID=250µA
AM03170v1
RDS(on)
(m)
15.5
VGS=10V
AM03176v1
1.1 15.0
14.5
1.0 14.0
13.5
0.9
0.8
-75 -25
25 75 100 125 TJ(°C)
13.0
12.5
12.0
0
5 10 15 20 25 30 35 ID(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
VGS
(V)
12 VDD=50V
10 VGS=10V
ID=65A
AM03171v1
C
(pF)
8
1000
6
AM03172v1
Ciss
4
2
0
0 20 40 60 80 100 Qg(nC)
100
0
Coss
Crss
25 50 75 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
AM03173v1
RDS(on)
(norm)
AM03174v1
1.2 VDS=VGS
ID=250µA
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 TJ(°C)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75
VGS=10V
ID=30A
-25 25 75
125 TJ(°C)
Doc ID 15207 Rev 3
7/18

7페이지



구       성총 18 페이지
다운로드[ STW70N10F4.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
STW70N10F4

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵