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B35N04J3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 B35N04J3
기능 MTB35N04J3
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B35N04J3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C453J3
Issued Date : 2009.03.11
Revised Date :
Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB35N04J3
BVDSS
40V
ID 12A
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
RDSON(MAX)
35mΩ
Equivalent Circuit
MTB35N04J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB35N04J3
Limits
40
±20
12
8
48
10
5
2
36
12
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




B35N04J3 pdf, 반도체, 판매, 대치품
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C453J3
Issued Date : 2009.03.11
Revised Date :
Page No. : 4/7
Gate Charge Characteristics
10
ID = 10A
8
VDS = 15V 20V
6
4
2
0
04 8
Qg - Gate Charge(nC)
12
16
Maximum Safe Operating Area
80
50 RDS(ON) Limit
10
1ms
10ms
100ms
1s
10s
DC
100μs
VGS= 10V
Single Pulse
1
RθJC= 6°C/ W
TC = 25°C
0
01
10
VDS - Drain-Source Voltage(V)
40 50
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 -4
10 -3
10 -2
10 -1
1
t 1 ,Time (sec)
1200
Capacitance Characteristics
900 Ciss
600
f = 1MHz
VGS = 0 V
300
0
0
50
40
Coss
Crss
10 20
VDS - Drain-Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
Single Pulse
RθJC = 6°C/ W
TC = 25°C
30
40
20
10
0
0.001
0.01 0.1 1 10
t 1,Time (sec)
100 1000
Notes:
PDM
t1
1.Duty
Cycle,D
t2
=
t1
t2
2.RθJC=6°C/ W
3.TJ - TC = P* RθJC (t)
4.RθJC(t)=r(t) * RθJC
10 100
1000
MTB35N04J3
CYStek Product Specification

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B35N04J3 전자부품, 판매, 대치품
CYStech Electronics Corp.
TO-252 Dimension
Spec. No. : C453J3
Issued Date : 2009.03.11
Revised Date :
Page No. : 7/7
A C Marking:
B
L
F
D
G
EK
3
H
2
I
1
J
Device Name
Date code
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
DIM
Inches
Min. Max.
A 0.0177 0.0217
B 0.0650 0.0768
C 0.0354 0.0591
D 0.0177 0.0236
E 0.2441 0.2677
F 0.2125 0.2283
Millimeters
Min. Max.
0.45 0.55
1.65 1.95
0.90 1.50
0.45 0.60
6.20 6.80
5.40 5.80
*: Typical
DIM
Inches
Min. Max.
Millimeters
Min. Max.
G 0.0866 0.1102 2.20 2.80
H
- *0.0906 -
*2.30
I
- 0.0449 -
1.14
J
- 0.0346 -
0.88
K 0.2047 0.2165 5.20 5.50
L 0.0551 0.0630 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead : KFC; pure tin plated
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB35N04J3
CYStek Product Specification

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Cystech Electonics
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