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PDF TSV524 Data sheet ( Hoja de datos )

Número de pieza TSV524
Descripción High merit factor CMOS op amps
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! TSV524 Hoja de datos, Descripción, Manual

TSV521, TSV522, TSV524,
TSV521A, TSV522A, TSV524A
High merit factor (1.15 MHz for 45 μA) CMOS op amps
SC70-5
DFN8 2x2
MiniSO8
QFN16 3x3
TSSOP14
Features
Gain bandwidth product: 1.15 MHz typ. at 5 V
Low power consumption: 45 µA typ. at 5 V
Rail-to-rail input and output
Low input bias current: 1 pA typ.
Supply voltage: 2.7 to 5.5 V
Low offset voltage: 800 µV max.
Unity gain stable on 100 pF capacitor
Automotive grade
Benefits
Increased lifetime in battery powered
applications
Easy interfacing with high impedance sensors
Datasheet - production data
Related products
See TSV631, TSV632, TSV634 series for
lower minimum supply voltage (1.5 V)
See LMV821, LMV822, LMV824 series for
higher gain bandwidth products (5.5 MHz)
Applications
Battery powered applications
Portable devices
Automotive signal conditioning
Active filtering
Medical instrumentation
Description
The TSV52x and TSV52xA series of operational
amplifiers offer low voltage operation and rail-to-
rail input and output. The TSV521 device is the
single version, the TSV522 device the dual
version, and the TSV524 device the quad version,
with pinouts compatible with industry standards.
The TSV52x and TSV52xA series offer an
outstanding speed/power consumption ratio,
1.15 MHz gain bandwidth product while
consuming only 45 µA at 5 V. The devices are
housed in the smallest industrial packages.
These features make the TSV52x, TSV52xA
family ideal for sensor interfaces, battery supplied
and portable applications. The wide temperature
range and high ESD tolerance facilitate their use
in harsh automotive applications.
Table 1. Device summary
Single
Standard Vio
TSV521
Enhanced Vio
TSV521A
Dual
TSV522
TSV522A
Quad
TSV524
TSV524A
January 2014
This is information on a product in full production.
DocID022743 Rev 1
1/27
www.st.com

1 page




TSV524 pdf
TSV52x, TSV52xA
Electrical characteristics
3 Electrical characteristics
Table 4. Electrical characteristics at VCC+ = +2.7 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and
RL = 10 kΩ connected to VCC/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
DC performance
TSV52xA, T = 25 °C
Vio Offset voltage
TSV52xA, -40 °C < T < 125 °C
TSV52x, T = 25 °C
ΔVio/ΔT Input offset voltage drift
Iio
Input offset current
(Vout = VCC/2)
TSV52x, -40 °C < T < 125 °C
-40 °C < T < 125 °C(1)
T = 25 °C
-40° C < T < 125 °C
Iib
Input bias current
(Vout = VCC/2)
T = 25 °C
-40 °C < T < 125 °C
CMR
Avd
VOH
Common-mode rejection
ratio 20 log (ΔVic/ΔVio)
Vic = -0.1 V to VCC+0.1V,
Vout = VCC/2, RL = 1 MΩ
Large signal voltage gain
Vout = 0.5 V to (VCC - 0.5V),
RL = 1 MΩ
High level output voltage
T = 25 °C
-40 °C < T < 125 °C
T = 25 °C
-40 °C < T < 125 °C
T = 25 °C
-40 °C < T < 125 °C
VOL Low level output voltage
T = 25 °C
-40 °C < T < 125 °C
Isink
Iout
Isource
Vout = VCC, T = 25 °C
Vout = VCC, -40 °C < T < 125 °C
Vout = 0 V, T = 25 °C
Vout = 0 V, -40 °C < T < 125 °C
ICC
Supply current (per channel) T = 25 °C
Vout = VCC/2, RL > 1 MΩ
-40 °C < T < 125 °C
AC performance
GBP
Fu
Φm
Gm
SR
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
Slew rate
RL = 10 kΩ, CL = 100 pF
RL = 10 kΩ, CL = 100 pF,
Vout = 0.5 V to VCC - 0.5 V
800
2600
µV
1.5
mV
3.3
3 18 µV/°C
1 10(3)
1 100(3)
1 10(3)
pA
1 100(3)
50 72
46
90 105
60
3 35
50
6 35
50
12 22
8
12 18
8
30 51
30 51
dB
mV
mA
µA
0.62 1
900
55
7
0.74
MHz
kHz
degrees
dB
V/µs
DocID022743 Rev 1
5/27
27

5 Page





TSV524 arduino
TSV52x, TSV52xA
Electrical characteristics
Figure 14. Positive slew rate vs. supply voltage Figure 15. Negative slew rate vs. supply voltage

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Figure 16. THD+N vs. frequency at VCC = 2.7 V Figure 17. THD+N vs. frequency at VCC = 5.5 V

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Figure 18. THD+N vs. output voltage at
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Figure 19. THD+N vs. output voltage at
VCC = 5.5 V



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DocID022743 Rev 1
11/27
27

11 Page







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