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PDF S-LBAT54CWT1G Data sheet ( Hoja de datos )

Número de pieza S-LBAT54CWT1G
Descripción DUAL SERIES SCHOTTKY BARRIER DIODE
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! S-LBAT54CWT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
DUAL SERIES SCHOTTKY BARRIER DIODE
These Schottky barrier diodes are designed for high speed
applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface
package is excellent for hand held and portable applications
space is limited.
LBAT54CWT1G
S-LBAT54CWT1G
FEATURES
1)Extremely Fast Switching Speed
2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
4)S- Prefix for automotive and other applications requiring unique
site and control change requirements; AEC-Q101 qualified and
PPAP capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAT54CWT1G
LBAT54CWT3G
Marking
5C
5C
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SC-70
ANODE
1
ANODE
2
3
CATHODE
MAXIMUM RATINGS(Ta = 25)
Parameter
DC reverse voltage
Total Device Dissipation
FR-5 Board,TA = 25°C
Derate above 25°C
DC forward current
Junction temperature
Storage temperature
Symbol
VR
PD
Limits
30
225
1.8
IF 200
Tj 125
Tstg −55+150
Unit
V
mW
mW/°C
mA
ELECTRICAL CHARACTERISTICS (Ta= 25)
Parameter
Symbol
Reverse Breakdown Voltage
V(BR)R
Forward voltage
VF
Forward voltage
VF
Forward voltage
VF
Forward voltage
VF
Forward voltage
VF
Reverse current
IR
Repetitive Peak Forward Current IFRM
Non–Repetitive Peak Forward
Current (t < 1.0 s)
IFSM
Min.
30
Typ. Max. Unit
Conditions
– – V IR = 10 μA
0.22 0.24 V IF=0.1mA
0.29 0.32 V IF=1mA
0.35 0.4 V IF=10mA
0.41 0.5 V IF=30mA
0.52 1 V IF=100mA
0.5 2 μA VR=25V
300 mA
600 mA
Total Capacitance
Reverse Recovery Time
CT
trr
10 pF V R = 1.0 V, f = 1.0 MHz
IF = I R = 10 mAdc,
5 ns I R(REC) = 1.0 mAdc
May,2015
Rev.C 1/3

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