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PDF LMDL301T1G Data sheet ( Hoja de datos )
| Número de pieza | LMDL301T1G | |
| Descripción | SCHOTTKY BARRIER DIODE | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low–cost, high–volume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V
• Low Reverse Leakage – I R = 13 nAdc (Typ)
• Device Marking: 4T
• We declare that the material of product
compliance with RoHS requirements.
1
CATHODE
2
ANODE
MAXIMUM RATINGS ( T J =125°C unless otherwise noted )
Symbol
Rating
V R Reverse Voltage
Value
30
LMDL301T1G
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
1
2
PLASTIC SOD– 323
CASE 477
Unit
Volts
THERMAL CHARACTERISTICS
Symbol
PD
R θJA
T J , T stg
Characteristic
Total Device Dissipation FR–5 Board,*
T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Max
200
1.57
635
–55 to+150
ORDERING INFORMATION
Device
LMDL301T1G
Marking
4T
LMDL301T3G
4T
Shipping
3000 / Tape & Reel
10000 / Tape & Reel
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I R = 10 µA)
Diode Capacitance
(V R = 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V R = 25 V) Figure 3
Forward Voltage
(I F = 1.0 mAdc) Figure 4
Forward Voltage
(I F = 10 mAdc) Figure 4
Symbol
V (BR)R
CT
IR
VF
VF
Min
30
—
—
—
—
Typ
—
0.9
13
0.38
0.52
Max
—
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMDL301T1G.PDF ] | |
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| LMDL301T1G | SCHOTTKY BARRIER DIODE | Leshan Radio Company |
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