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PDF S-LBAS316T1G Data sheet ( Hoja de datos )
| Número de pieza | S-LBAS316T1G | |
| Descripción | High speed diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High-speed diode
DESCRIPTION
The LBAS316T1 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323(SC76) SMD
plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 100 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
LBAS316T1G
S-LBAS316T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Marking
Shipping
LBAS316T1G
S-LBAS316T1G
LBAS316T3G
S-LBAS316T3G
Z9
Z9
3000 Tape & Reel
10000 Tape & Reel
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
t rr reverse recovery time
V fr forward recovery voltage
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
when switched from I F=10mA to I R= 10mA;
R L= 100 Ω; measured at I R= 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
715
855
1
1.25
30
1
30
50
2
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
1.75
V
Rev.O 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet S-LBAS316T1G.PDF ] | |
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