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부품번호 | BLM3401 기능 |
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기능 | P-Channel Enhancement Mode Power MOSFET | ||
제조업체 | BELLING | ||
로고 | |||
전체 6 페이지수
Pb Free Product
BLM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -4.2A
RDS(ON) < 120mΩ @ VGS=-2.5V
RDS(ON) < 72mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3401
BLM3401
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-4.2
-30
1.2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
104 ℃/W
Min Typ Max Unit
-30 - V
- - -1 µA
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Pb Free Product
BLM3401
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BLM3400 | N-Channel Enhancement Mode Power MOSFET | BELLING |
BLM3401 | P-Channel Enhancement Mode Power MOSFET | BELLING |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |