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PDF BLM9926 Data sheet ( Hoja de datos )
| Número de pieza | BLM9926 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | BELLING | |
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Pb Free Product
BLM9926
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM9926 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =20V,ID =6A
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 40mΩ @ VGS=2.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
9926
BLM9926
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
20
±12
6
3.8
25
1.25
-55 To 150
100
Unit
V
V
A
A
A
W
℃
℃/W
www.belling.com.cn
Page1
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Pb Free Product
BLM9926
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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| PDF Descargar | [ Datasheet BLM9926.PDF ] | |
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