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BLM138K PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BLM138K
기능 N-Channel Enhancement Mode Power MOSFET
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BLM138K 데이터시트, 핀배열, 회로
Pb Free Product
BLM138K
N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
VDS = 50V,ID = 0.22A
RDS(ON) < 3@ VGS=5V
RDS(ON) < 2@ VGS=10V
ESD RatingHBM 2300V
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
138K
BLM138K
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
50
±20
0.22
0.88
0.35
-55 To 150
350
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=50V,VGS=0V
Min Typ Max Unit
50 65
--
-
1
V
μA
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BLM138K pdf, 반도체, 판매, 대치품
Pb Free Product
BLM138K
Qg Gate Charge (nC)
Figure 7 Gate Charge
Vds Source-Drain Voltage (V)
Figure 8 Source-DrainDiode Forward
TJ-Junction Temperature()
Figure 9 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 10 Safe Operation Area
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
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부품번호상세설명 및 기능제조사
BLM138K

N-Channel Enhancement Mode Power MOSFET

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