(PDF) BLV297 Datasheet - N-Channel Enhancement Mode Power MOSFET

Número de pieza	BLV297
Descripción	N-Channel Enhancement Mode Power MOSFET
Fabricantes	BELLING
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No Preview Available ! BLV297 N-channel Enhancement Mode Power MOSFET • Ease of Paralleling • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20um Al Ti / Ni / Ag 140µm X 102µm 540µm X 540µm Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS VSD Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward On Voltage VGS=0V, ID=250uA VGS=10V, ID=0.65A VDS=VGS, ID=400uA VDS=200V, VGS=0V VGS= 20V VGS=0V, IS=0.65A Min. 200 - 0.5 - - - Typ. - - - - - - Max. - 2.0 1.8 0.1 10 1.2 Units V Ω V uA nA V http://www.belling.com.cn -1- Total 1 Pages 2/27/2008 1 page

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PDF BLV297 Data sheet ( Hoja de datos )