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MRFE6S9205HR3 데이터시트 PDF




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부품번호 MRFE6S9205HR3 기능
기능 RF Power Field Effect Transistors
제조업체 Freescale Semiconductor
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MRFE6S9205HR3 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9205H
Rev. 0, 10/2007
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
RθJC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
1




MRFE6S9205HR3 pdf, 반도체, 판매, 대치품
VBIAS
RF
INPUT Z1
B1
+
R2
C5
Z2 Z3 Z4
R3
C6 C7
R1
Z5 Z6 Z7
C1
C2 C3 C4
DUT
VSUPPLY
+
C21 C22 C23 C24 C25 C26
Z8 RF
Z10 Z11
Z12
Z13
Z14 Z15 Z16 Z17 OUTPUT
Z9 C8 C9 C10 C11 C12 C13
C27
C14
VSUPPLY
+
C15 C16 C17 C18 C19 C20
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
Z10
0.263x 0.065Microstrip
0.310x 0.065Microstrip
0.711x 0.120Microstrip
0.199x 0.120Microstrip
0.263x 1.020x 0.120Taper
0.351x 1.020Microstrip
0.055x 1.020Microstrip
0.947x 0.120Microstrip
0.060x 0.980Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.150x 0.980Microstrip
0.200x 0.980x 0.387Taper
0.115x 0.444Microstrip
0.140x 0.444x 0.110Taper
0.770x 0.110Microstrip
0.442x 0.065Microstrip
0.274x 0.065Microstrip
Taconic RF35 0.030, εr = 3.5
Figure 1. MRFE6S9205HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9205HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 Short RF Bead
2743019447
C1, C7, C15, C16, C21,
C22, C27
39 pF Chip Capacitors
ATC100B390JT500XT
C2, C14
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
C3, C4
5.1 pF Chip Capacitors
ATC100B5R1JT500XT
C5
33 μF, 25 V Electrolytic Capacitor
EMVY350ADA330MF55G
C6, C17, C18, C19, C23,
C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
C8, C9, C10, C11, C12, C13 6.8 pF Chip Capacitors
ATC100B6R8JT500XT
C20, C26
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK255
R1, R3
3.3 Ω, 1/3 W Chip Resistors
CRCW12103R30FKEA
R2
2.2 kΩ, 1/4 W Chip Resistor
CRCW12062K20FKEA
Manufacturer
Fair - Rite
ATC
Johanson
ATC
Nippon Chemi - Con
Murata
ATC
United Chemi - Con
Vishay
Vishay
MRFE6S9205HR3 MRFE6S9205HSR3
4
RF Device Data
Freescale Semiconductor

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MRFE6S9205HR3 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, IDQ = 1400 mA
−20 f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1 10 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
VDD = 28 Vdc, Pout = 220 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
−10 (f1 + f2)/2 = Center Frequency of 880 MHz
−20
IM3−U
−30
IM3−L
IM5−U
−40 IM5−L
−50 IM7−U
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Output Power
1
Ideal
0
50
45
−1 40
−2 −1 dB = 51.81 W
35
−3
ηD
−2 dB = 73.12 W
−4 VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
−5
30 40 50 60 70 80
Actual 30
−3 dB = 99.2 W 25
20
90 100 110
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
23
22 Gps
21
TC = −30_C
25_C
70
−30_C
25_C
60
50
20 85_C
19
85_C
40
30
18 20
17
ηD
16
1
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
10
0
10 100 400
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
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MRFE6S9205HR3

RF Power Field Effect Transistors

Freescale Semiconductor
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