PDF MRFE6S9205HSR3 Data sheet ( Hoja de datos )

Número de pieza	MRFE6S9205HSR3
Descripción	RF Power Field Effect Transistors
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • 6T144yp0Di0cPamCl ASH,inwPgoilteuht-5=C0a5%r8riWCerlaiptWptsin-ACgv,DgCM.,hAFaunPlnleeFrlfroBerqamunaednnwcciedy:tBhVa=DnD3d.=,8342G8MPVHPozlTt,seI,nsItpDuMQto=Sdiegln1a,l PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21.2 dB Drain Efficiency — 34% Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9205H Rev. 0, 10/2007 MRFE6S9205HR3 MRFE6S9205HSR3 880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9205HR3 CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9205HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +66 - 0.5, +12 - 65 to +150 150 225 Vdc Vdc °C °C °C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 202 W CW Case Temperature 77°C, 58 W CW RθJC 0.27 0.33 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9205HR3 MRFE6S9205HSR3 1 1 page B1 R2 C5 R3 C6 C7 C4 R1 C1 C2 C3 C26 C21 C23 C24 C22 C9 C13 C12 C10 C8 C11 C25 C14 C19 C27 C15 C16 C17 C18 MRFE6S9205H Rev. 1 C20 Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor MRFE6S9205HR3 MRFE6S9205HSR3 5 5 Page PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 Date Oct. 2007 • Initial Release of Data Sheet Description RF Device Data Freescale Semiconductor MRFE6S9205HR3 MRFE6S9205HSR3 11 11 Page

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