|
|
PDF DSF07S30U Data sheet ( Hoja de datos )
| Número de pieza | DSF07S30U | |
| Descripción | Silicon Epitaxial Schottky Barrier Type Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DSF07S30U (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF07S30U
DSF07S30U
High Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
VR
IO
IFSM
Tj
Tstg
30
700 ＊
5
125
−55 to 125
V
mA
A
°C
°C
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
USC
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 4.5 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
CT
Test
Circuit
Test Condition
― IF = 10mA
― IF = 200mA
― IF = 700mA
― VR = 30V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.20 ―
― 0.30 ―
V
― 0.39 0.45
― 12 50 μA
⎯ 170 ⎯
pF
Marking
Equivalent Circuit (top view)
FN
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
1 2009-04-28
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DSF07S30U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DSF07S30U | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |