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2DB1182Q 데이터시트 PDF




Diodes에서 제조한 전자 부품 2DB1182Q은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 2DB1182Q 기능
기능 32V PNP MEDIUM POWER TRANSISTOR
제조업체 Diodes
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2DB1182Q 데이터시트, 핀배열, 회로
Features
BVCEO > -32V
IC = -2A High Continuous Collector Current
ICM = -3A Peak Pulse Current
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2DB1182Q
32V PNP MEDIUM POWER TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable
per MIL-STD-202, Method 208 e3
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
Top View
C
C
BB
EE
Device Schematic
Pin Out Configuration
Top view
Ordering Information (Note 4)
Product
2DB1182Q-13
Compliance
AEC-Q101
Marking
2DB1182Q
Reel Size (inches)
13
Tape Width (mm)
16
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
2DB1182Q
2DB1182Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
2DB1182Q
Document number: DS35651 Rev. 3 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated




2DB1182Q pdf, 반도체, 판매, 대치품
0.4
IC/IB = 10
0.3
0.2
TA = 150°C
TA = 125°C
0.1
TA = 85°C
TA = 25°C
TA = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 10
1.0
1.2
VCE = -3V
1.0
2DB1182Q
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 125°C
0.2 TA = 150°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.8 TA = -55°C
TA = 25°C
0.6
TA = 85°C
TA = 125°C
0.4
TA = 150°C
0.2
100
Cibo
Cobo
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
140
120
VCE = -5V
f = 30MHz
100
80
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Figure 7 Typical Capacitance Characteristics
60
40
20
0
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current
2DB1182Q
Document number: DS35651 Rev. 3 - 2
4 of 6
www.diodes.com
November 2014
© Diodes Incorporated

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관련 데이터시트

부품번호상세설명 및 기능제조사
2DB1182Q

32V PNP MEDIUM POWER TRANSISTOR

Diodes
Diodes

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