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2DD1766R 데이터시트 PDF




Diodes에서 제조한 전자 부품 2DD1766R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 2DD1766R 기능
기능 NPN SURFACE MOUNT TRANSISTOR
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2DD1766R 데이터시트, 핀배열, 회로
2DD1766P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (2DB1188)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
40
32
5
2.5
2
Unit
V
V
V
A
A
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max
V(BR)CBO
40
V(BR)CEO
32
V(BR)EBO
5
⎯⎯
ICBO
1
IEBO
1
VCE(SAT)
0.3 0.8
2DD1766P
82 180
2DD1766Q hFE 120 270
2DD1766R
180 390
fT 220
Cob 13
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 20V, IE = 0
VEB = 4V, IC = 0
IC = 2A, IB = 0.2A
VCE = 3V, IC = 0.5A
VCE = 5V, IE = -50mA,
f = 100MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31167 Rev. 4 - 2
1 of 4
www.diodes.com
2DD1766P/Q/R
© Diodes Incorporated




2DD1766R pdf, 반도체, 판매, 대치품
Suggested Pad Layout
1.7
0.4
0.9
2.7
1.9
3.0
1.3
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31167 Rev. 4 - 2
4 of 4
www.diodes.com
2DD1766P/Q/R
© Diodes Incorporated

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