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PDF SMBJ70A Data sheet ( Hoja de datos )
| Número de pieza | SMBJ70A | |
| Descripción | Transil | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Features
■ Peak pulse power:
– 600 W (10/1000 μs)
– 4 kW (8/20 µs)
■ Stand off voltage range: from 5 V to 188 V
■ Unidirectional and bidirectional types
■ Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
■ Operating Tj max: 150 °C
■ High power capability at Tj max:
– 515 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5
■ MIL STD 883G, method 3015-7 Class 3B:
– 25 kV HBM (human body model)
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 soldererability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
SMBJ
Transil™
A
K
Unidirectional
Bidirectional
SMB
(JEDEC DO-214AA)
Description
The SMBJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 600 W (10/1000 μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMBJ are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
October 2010
TM: Transil is a trademark of STMicroelectronics
Doc ID 5616 Rev 10
1/10
www.st.com
10
1 page  
SMBJ
Characteristics
Figure 6.
C(pF)
10000
1000
100
10
1
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
F=1 MHz
Vosc=30 mVRMS
Tj=25 °C
C(pF)
10000
SMBJ5.0A
1000
SMBJ12A
SMBJ24A
SMBJ40A
100
SMBJ85A
VR(V)
10
SMBJ188A
100 1000
10
1
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
SMBJ5.0CA
F=1 MHz
Vosc=30 mVRMS
Tj=25 °C
SMBJ12CA
SMBJ24CA
SMBJ40CA
SMBJ85CA
VR(V)
10
SMBJ188CA
100 1000
Figure 8. Peak forward voltage drop
versus peak forward current
(typical values)
IFM(A)
1.0E+02
1.0E+01
1.0E+00
Tj =125 °C
Tj =25 °C
Figure 9. Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
Zth(j-a) / Rth(j-a)
1.00
Recommended pad layout
PCB FR4, copper thickness = 35 µm
0.10
1.0E-01
1.0E-02
VFM(V)
0.01
tP(s)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under each lead
110 Rth(J-A)(°C/W)
100
PCB FR4, copper thickness = 35 µm
90
80
70
60
50
40
30
20
10
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 11. Leakage current versus junction
temperature (typical values)
1.E+03 IR (nA)
1.E+02
VR=VRM
VRM < 10 V
1.E+01
1.E+00
1.E-01
25
VR=VRM
VRM ≥ 10 V
Tj(°C)
50 75 100 125 150
Doc ID 5616 Rev 10
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SMBJ70A.PDF ] | |
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