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PDF SS8550 Data sheet ( Hoja de datos )
| Número de pieza | SS8550 | |
| Descripción | PNP Transistor | |
| Fabricantes | KOO CHIN | |
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SS8550 TRANSISTOR (PNP)
SOT-23
FEATURES
Complimentary to SS8050
MARKING: Y2
1. Base
2.Emitter
3.Collector
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
VBEF
fT
Cob
Test conditions
IC=-100μA, IE=0
IC=-0.1mA, IB=0
IE=-100μA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
IC=-1V,VCE=-10mA
IB=-1A
VCE= -10V, IC= -50mA
f=30MHz
(VCB=-10V,IE=0,f=1MHz)
MIN
-40
-25
-5
120
40
100
MAX
-0.1
-0.1
-0.1
400
UNIT
V
V
V
μA
μA
μA
-0.5
-1.2
-1
-1.55
V
V
V
V
MHz
20 pF
H
200-350
J
300-400
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS8550.PDF ] | |
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