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MDD5N40 PDF 데이터시트 ( Data , Function )

부품번호 MDD5N40 기능
기능 N-Channel MOSFET
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MDD5N40 데이터시트, 핀배열, 회로
MDI5N40/MDD5N40
N-Channel MOSFET 400V, 3.4 A, 1.6
General Description
The MDI5N40 / MDD5N40 use advanced
Magnachips MOSFET Technology, which provides
low on-state resistance, high switching performance
and excellent quality.
MDI5N40 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 400V
ID = 3.4A
RDS(ON) ≤ 1.6
Applications
Power Supply
PFC
Ballast
@VGS = 10V
@VGS = 10V
D
I-PAK
G D S (TO-251)
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(4)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAR
EAS
TJ, Tstg
Rating
400
±30
3.4
2.15
13.6
45
0.36
4.5
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec. 2011. Version 1.5
1
Symbol
RθJA
RθJC
Rating
110
2.75
Unit
oC/W
MagnaChip Semiconductor Ltd.




MDD5N40 pdf, 반도체, 판매, 대치품
10 Note : ID = 5A
8
6
4
2
0
0246
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
80V
200V
320V
8
600
Coss
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
Ciss
300
200
Crss
100
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100 DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
10 µs
100 µs
1 ms
10 ms
100 ms
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature []
Fig.10 Maximum Drain Current vs. Case
Temperature
D=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.75/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
5000
4000
3000
single Pulse
RthJC = 2.75/W
TC = 25
2000
1000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec. 2011. Version 1.5
4 MagnaChip Semiconductor Ltd.

4페이지










MDD5N40 전자부품, 판매, 대치품
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Dec. 2011. Version 1.5
7 MagnaChip Semiconductor Ltd.

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부품번호상세설명 및 기능제조사
MDD5N40

N-Channel MOSFET

MagnaChip
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