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74AUP1G32 데이터시트 PDF




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부품번호 74AUP1G32 기능
기능 SINGLE 2 INPUT POSITIVE OR GATE
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74AUP1G32 데이터시트, 핀배열, 회로
74AUP1G32
SINGLE 2 INPUT POSITIVE OR GATE
Description
The Advanced Ultra Low Power (AUP) CMOS logic family is designed
for low power and extended battery life in portable applications.
The 74AUP1G32 is a single, two-input, positive OR gate with a
standard push-pull output designed for operation over a power supply
range of 0.8V to 3.6V. The device is fully specified for partial power
down applications using IOFF. The IOFF circuitry disables the output,
preventing damaging current backflow when the device is powered
down.
The gate performs the positive Boolean function:
Pin Assignments
Y = A + B or Y = A B
Features
Advanced Ultra Low Power (AUP) CMOS
Supply Voltage Range from 0.8V to 3.6V
±4mA Output Drive at 3.0V
Low Static Power Consumption
Icc < 0.9µA
Low Dynamic Power Consumption
CPD = 6.3pF (Typical at 3.6V)
Schmitt Trigger Action at all inputs makes the circuit tolerant for
slower input rise and fall time. The hysteresis is typically 250mV
at VCC = 3.0V.
IOFF Supports Partial-Power-Down Mode Operation
ESD Protection Exceeds JESD 22
2000-V Human Body Model (A114)
Exceeds 1000-V Charged Device Model (C101)
Latch-Up Exceeds 100mA per JESD 78, Class I
Leadless Packages Named per JESD30E
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
4Y
5 NC
6 Vcc
Applications
Suited for Battery and Low Power Needs
Wide Array of Products Such As:
Tablets, E-readers
Cell Phones, Personal Navigation / GPS
MP3 Players, Cameras, Video Recorders
PCs, Ultrabooks, Notebooks, Netbooks
Computer Peripherals, Hard Drives, SSDs, CD/DVD ROMs
TVs, DVDs, DVRs, Set-Top Boxes
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
74AUP1G32
Document number: DS35154 Rev. 4 - 2
1 of 16
www.diodes.com
February 2015
© Diodes Incorporated




74AUP1G32 pdf, 반도체, 판매, 대치품
74AUP1G32
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol Parameter
Test Conditions
VIH
VIL
VOH
VOL
II
IOFF
IOFF
ICC
ICC
High-Level Input
Voltage
Low-Level Input
Voltage
IOH = -20µA
IOH = -1.1mA
IOH = -1.7mA
High-Level
IOH = -1.9mA
Output Voltage IOH = -2.3mA
IOH = -3.1mA
IOH = -2.7mA
IOH = -4mA
IOL = 20µA
IOL = 1.1mA
IOL = 1.7mA
Low-Level
IOL = 1.9mA
Output Voltage IOL = 2.3mA
IOL = 3.1mA
IOL = 2.7mA
IOL = 4mA
Input Current A or B Input VI = GND to 3.6V
Power Down
Leakage Current
VI or VO = 0V to 3.6V
Delta Power
Down Leakage
Current
VI or VO = 0V to 3.6V
Supply Current VI = GND or VCC, IO = 0
Additional Supply One Input at VCC -0.6V Other
Current
Inputs at VCC or GND
VCC
0.8V to 1.65V
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 1.65V
1.65V to 1.95V
2.3V to 2.7V
3.0V to 3.6V
0.8V to 3.6V
1.1V
1.4V
1.65V
2.3V
3V
0.8V to 3.6V
1.1V
1.4V
1.65V
2.3V
3V
0V to 3.6V
0
0V to 0.2V
TA = +25°C
Min Max
TA = -40°C to +85°C
Min Max
0.80 x VCC — 0.80 x VCC
0.65 x VCC — 0.65 x VCC
1.6 — 1.6 —
2.0 — 2.0 —
— 0.30 x VCC 0.30 x VCC
— 0.35 x VCC 0.35 x VCC
— 0.7 — 0.7
— 0.9 — 0.9
VCC – 0.1
0.75 x VCC
1.11
VCC – 0.1
0.7 x VCC
1.03
1.32 — 1.3 —
2.05 — 1.97 —
1.9 — 1.85 —
2.72 — 2.67 —
2.6 — 2.55 —
— 0.1 — 0.1
0.3 x VCC 0.3 x VCC
— 0.31 — 0.37
— 0.31 — 0.35
— 0.31 — 0.33
— 0.44 — 0.45
— 0.31 — 0.33
— 0.44 — 0.45
— ±0.1 — ±0.5
0.2 0.6
——
0.2 0.6
0.8V to 3.6V
0.5
0.9
3.3V
— 40 — 50
Unit
V
V
V
V
µA
µA
µA
µA
µA
74AUP1G32
Document number: DS35154 Rev. 4 - 2
4 of 16
www.diodes.com
February 2015
© Diodes Incorporated

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74AUP1G32 전자부품, 판매, 대치품
74AUP1G32
Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.)
Parameter
Test
Conditions
CPD
Power Dissipation
Capacitance
f = 1MHz
No Load
CI Input Capacitance
θJA
Thermal Resistance
Junction-to-Ambient
θJC
Thermal Resistance
Junction-to-Case
VI = VCC or GND
SOT353
X2-DFN0808-4
X1-DFN1010-6
X2-DFN1010-6
(Note 9)
X2-DFN1409-6
X2-DFN1410-6
SOT353
X2-DFN0808-4
X1-DFN1010-6
X2-DFN1010-6
(Note 9)
X2-DFN1409-6
X2-DFN1410-6
VCC
0.8V
1.2V ± 0.1V
1.5V ± 0.1V
1.8V ± 0.15V
2.5V ± 0.2V
3.3V ± 0.3V
0V or 3.3V
Typ Unit
6.9
6.8
6.7
pF
6.6
6.4
6.3
1.5 pF
371
430
435
°C/W
445
470
460
143
240
250
°C/W
250
275
265
Note:
9. Test condition for each of the six package types: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AUP1G32
Document number: DS35154 Rev. 4 - 2
7 of 16
www.diodes.com
February 2015
© Diodes Incorporated

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SINGLE 2 INPUT POSITIVE OR GATE

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