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PDF PMZB290UN Data sheet ( Hoja de datos )
| Número de pieza | PMZB290UN | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMZB290UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Fast switching
Trench MOSFET technology
Low threshold voltage
Ultra thin package profile with
0.37 mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 20 V
-8 -
8V
- - 1A
- 290 350 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
PMZB290UN
20 V, single N-channel Trench MOSFET
103 017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
0 0.01
10
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
10
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB290UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
Footprint information for reflow soldering
PMZB290UN
20 V, single N-channel Trench MOSFET
1.3
0.7 R0.05 (8x)
SOT883B
0.9
0.25
(2x)
0.3
(2x)
0.4
(2x)
0.3
0.4
solder land
solder paste deposit
occupied area
solder land plus solder paste
solder resist
Dimensions in mm
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
0.6 0.7
sot883b_fr
PMZB290UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
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