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BCP53-16T1G 데이터시트 PDF




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기능 PNP Silicon Epitaxial Transistors
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BCP53-16T1G 데이터시트, 핀배열, 회로
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
High Current
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Device Marking:
BCP53T1G = AH
BCP53−10T1G = AH−10
BCP53−16T1G = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
−80
−100
−5.0
1.5
1.5
12
Vdc
Vdc
Vdc
Adc
W
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
Lead Temperature for Soldering,
0.0625from case
Time in Solder Bath
Symbol
RqJA
TL
Max
83.3
260
10
Unit
°C/W
°C
s
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 11
1
http://onsemi.com
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
12 3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
A = Assembly Location
Y = Year
W = Work Week
XXXXX = Specific Device Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BCP53T1G
SBCP53−10T1G
BCP53−10T1G
SBCP53−10T1G
BCP53−16T1G
SBCP53−16T1G
BCP53−16T3G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCP53T1/D




BCP53-16T1G pdf, 반도체, 판매, 대치품
BCP53 Series
TYPICAL CHARACTERISTICS
1.2
Vce = 2 V
1.1
BCP53, −10
1.0
0.9
−55°C
0.8
0.7
0.6 +25°C
0.5
0.4
+150°C
0.3
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. BCP53, −10 Base Emitter Turn−On
Voltage vs. Collector Current VBE(on)
1.0
BCP53, −10, −16
0.9
IC = 1.0 A
0.8
IC = 500 mA
0.7
0.6
IC = 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
IC = 1.5 A
0.1
1
Ib, BASE CURRENT (A)
Figure 9. BCP53, −10, −16 Saturation Region
1.2
Vce = 2 V
1.1
BCP53 −16
1.0
0.9
−55°C
0.8
0.7 +25°C
0.6
0.5
+150°C
0.4
0.3
0.2
0.001
0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Figure 8. BCP53−16 Base Emitter Turn−On
Voltage vs. Collector Current
110
BCP53−10
100
90 BCP53
80
70
60
BCP53−16
50
40
01 2 34
VOLTAGE (V)
Figure 10. Input Capacitance
5
25
20
BCP53−10
15
10
5 BCP53−16
BCP53
0
0 2 4 6 8 10 12 14 16 18 20
VOLTAGE (V)
Figure 11. Output Capacitance
10 100 ms 10 ms
1 s 1 ms
1
CONTINUOUS THERMAL LIMIT
0.1
SINGLE PULSE TEST AT Tamb = 25°C
0.01
0.1 1
10
Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Standard Operating Area
100
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PNP Silicon Epitaxial Transistors

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