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PDF XP151A13A0MR Data sheet ( Hoja de datos )
| Número de pieza | XP151A13A0MR | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Torex Semiconductor | |
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XP151A13A0MR-G
Power MOSFET
ETR1119_003
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
■FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.14Ω@ Vgs = 2.5V
: Rds(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PRODUCT NAMES
11 3 x
G：Gate
S：Source
D：Drain
PRODUCTS
XP151A13A0MR
XP151A13A0MR-G(*)
PACKAGE
SOT-23
SOT-23
ORDER UNIT
3,000/Reel
3,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±8
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
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1 page  
XP151A13A0MR-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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