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NTTFS4C08N 데이터시트 PDF




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부품번호 NTTFS4C08N 기능
기능 Power MOSFET ( Transistor )
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NTTFS4C08N 데이터시트, 핀배열, 회로
NTTFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
30
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VGS ±20
TA = 25°C
ID
15
TA = 85°C
10.8
TA = 25°C PD 2.13
Unit
V
V
A
W
Continuous Drain
Current RqJA 10 s
(Note 1)
TA = 25°C
TA = 85°C
ID
21 A
15
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.2 W
9.3 A
6.7
0.82 W
52 A
37.5
25.5 W
144 A
−55 to °C
+150
23 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH,
RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
42 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
www.onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.9 mW @ 10 V
9.0 mW @ 4.5 V
ID MAX
52 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C08 D
S AYWWG D
GGD
4C08
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C08NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1
Publication Order Number:
NTTFS4C08N/D




NTTFS4C08N pdf, 반도체, 판매, 대치품
NTTFS4C08N
TYPICAL CHARACTERISTICS
100
5.5 V −
90 10 V
80
70
60
4.5 V
4.2 V
4V
3.8 V
3.6 V
50 3.4 V
40
3.2 V
30
20 3.0 V
2.8 V
10
0 TJ = 25°C
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
80
70 VDS = 3 V
60
50
40
30
20 TJ = 125°C
10
TJ = 25°C
TJ = −55°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
ID = 30 A
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
0.002
0.002
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. VGS
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
VGS = 10 V
1.5
1.4
1.3
10000
VGS = 0 V
1000
TJ = 150°C
TJ = 125°C
1.2
1.1 100 TJ = 85°C
1
0.9
0.8
0.7
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
5
10 15 20 25 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4

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NTTFS4C08N 전자부품, 판매, 대치품
NTTFS4C08N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0.20 C
D
D1
87 65
A
B
2X
0.20 C
E1 E
0.10 C
1 2 34
TOP VIEW
0.10 C
A
c
SIDE VIEW DETAIL A
8X b
0.10 C A B
0.05 C
4X L
1
e/2
4
K
E2
E3
M
85
G D2 L1
BOTTOM VIEW
6X
e
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
4X
q
A1
C
SEATING
PLANE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 −−− 0.05 0.000 −−− 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC
0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC
0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC
0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.65 0.80 0.95 0.026 0.032 0.037
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q
0 _ −−− 12 _
0 _ −−− 12 _
SOLDERING FOOTPRINT*
8X
0.42
PACKAGE
OUTLINE
0.65
4X
PITCH 0.66
0.75 0.57
3.60
2.30
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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부품번호상세설명 및 기능제조사
NTTFS4C08N

Power MOSFET ( Transistor )

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