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부품번호 | NTTFS4C10N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
NTTFS4C10N
Power MOSFET
30 V, 44 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
TA = 25°C
TA = 80°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13.3
9.9
2.09
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 80°C
ID
18.2 A
13.6
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
3.9 W
8.2 A
6.1
0.79 W
44 A
33
23.6 W
128
−55 to
+150
20
6.0
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
TL
31 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 A, EAS = 14 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
7.4 mW @ 10 V
11 mW @ 4.5 V
ID MAX
44 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C10 D
S AYWWG D
GGD
4C10
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C10NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4C10NTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
NTTFS4C10N/D
NTTFS4C10N
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
4.0 V
4.2 V to 10 V
TJ = 25°C
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1234 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
80
70 VDS = 5 V
60
50
40
30
20 TJ = 125°C
TJ = 25°C
10
0 TJ = −55°C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.020
0.018
0.016
ID = 30 A
0.020
0.018
0.016
TJ = 25°C
0.014
0.014
0.012
0.010
0.012
0.010
VGS = 4.5 V
0.008
0.006
0.008
0.006
VGS = 10 V
0.004
0.004
0.002
0.002
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. VGS
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
10000
VGS = 0 V
TJ = 150°C
1.4
1.3
1000
TJ = 125°C
1.2
1.1
1.0 100 TJ = 85°C
0.9
0.8
0.7 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
4페이지 NTTFS4C10N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0.20 C
D
D1
87 65
A
B
2X
0.20 C
E1 E
0.10 C
0.10 C
1 2 34
TOP VIEW
SIDE VIEW
c
A
DETAIL A
8X b
0.10 C A B
0.05 C
4X L
1
e/2
4
K
E2 E3
M
G
85
D2
L1
BOTTOM VIEW
6X
e
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
4X
q
A1
C
SEATING
PLANE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00
−−− 0.05 0.000
−−− 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC
0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC
0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC
0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.65 0.80 0.95 0.026 0.032 0.037
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q
0 _ −−− 12 _
0 _ −−− 12 _
SOLDERING FOOTPRINT*
8X
0.42
PACKAGE
OUTLINE
0.65
PITCH
4X
0.66
0.75 0.57
3.60
2.30
0.47 2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTTFS4C10N/D
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