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NTTFS4C10N 데이터시트 PDF




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부품번호 NTTFS4C10N 기능
기능 Power MOSFET ( Transistor )
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NTTFS4C10N 데이터시트, 핀배열, 회로
NTTFS4C10N
Power MOSFET
30 V, 44 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
TA = 25°C
TA = 80°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13.3
9.9
2.09
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 80°C
ID
18.2 A
13.6
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
3.9 W
8.2 A
6.1
0.79 W
44 A
33
23.6 W
128
55 to
+150
20
6.0
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
31 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 A, EAS = 14 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
7.4 mW @ 10 V
11 mW @ 4.5 V
ID MAX
44 A
NChannel MOSFET
D (58)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C10 D
S AYWWG D
GGD
4C10
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C10NTAG WDFN8 1500 / Tape &
(PbFree)
Reel
NTTFS4C10NTWG WDFN8 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
Publication Order Number:
NTTFS4C10N/D




NTTFS4C10N pdf, 반도체, 판매, 대치품
NTTFS4C10N
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
4.0 V
4.2 V to 10 V
TJ = 25°C
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1234 5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
80
70 VDS = 5 V
60
50
40
30
20 TJ = 125°C
TJ = 25°C
10
0 TJ = 55°C
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.020
0.018
0.016
ID = 30 A
0.020
0.018
0.016
TJ = 25°C
0.014
0.014
0.012
0.010
0.012
0.010
VGS = 4.5 V
0.008
0.006
0.008
0.006
VGS = 10 V
0.004
0.004
0.002
0.002
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
10 20 30 40 50 60 70
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. VGS
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.7
1.6 ID = 30 A
1.5 VGS = 10 V
10000
VGS = 0 V
TJ = 150°C
1.4
1.3
1000
TJ = 125°C
1.2
1.1
1.0 100 TJ = 85°C
0.9
0.8
0.7 10
50 25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
4

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NTTFS4C10N 전자부품, 판매, 대치품
NTTFS4C10N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0.20 C
D
D1
87 65
A
B
2X
0.20 C
E1 E
0.10 C
0.10 C
1 2 34
TOP VIEW
SIDE VIEW
c
A
DETAIL A
8X b
0.10 C A B
0.05 C
4X L
1
e/2
4
K
E2 E3
M
G
85
D2
L1
BOTTOM VIEW
6X
e
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
4X
q
A1
C
SEATING
PLANE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00
−−− 0.05 0.000
−−− 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC
0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC
0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC
0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.65 0.80 0.95 0.026 0.032 0.037
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q
0 _ −−− 12 _
0 _ −−− 12 _
SOLDERING FOOTPRINT*
8X
0.42
PACKAGE
OUTLINE
0.65
PITCH
4X
0.66
0.75 0.57
3.60
2.30
0.47 2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTTFS4C10N/D

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부품번호상세설명 및 기능제조사
NTTFS4C10N

Power MOSFET ( Transistor )

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