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NTTFS4H07N 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NTTFS4H07N 데이터시트, 핀배열, 회로
NTTFS4H07N
Power MOSFET
25 V, 66 A, Single N−Channel, m8−FL
Features
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 32 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
25
±20
18.5
2.64
66
33.8
216
51
V
V
A
W
A
W
A
mJ
dV/dt
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
47.3
3.7
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
www.onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
7.1 mW
4.8 mW
TYP QGTOT
5.7 nC
12.4 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1
Publication Order Number:
NTTFS4H07N/D




NTTFS4H07N pdf, 반도체, 판매, 대치품
NTTFS4H07N
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
TJ = 25°C
VGS = 0 V
Crss
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tr
tf
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
50 ms
10 100 ms
1
0 V < VGS < 10 V
0.1 RDS(on) Limit
Thermal Limit
0.01
0.01
Package Limit
0.1 1
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgs Qgd
TJ = 25°C
2
VGS = 10 V
VDD = 12.0 V
ID = 30 A
0
0 2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12 TJ = 125°C
10
TJ = 25°C
8
6
4
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
22
20
18 ID = 21 A
16
14
12
10
8
6
4
2
0
25
50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4

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NTTFS4H07N 전자부품, 판매, 대치품
NTTFS4H07N
PACKAGE DIMENSIONS
0.10 C
0.10 C
8X b
0.10 C A B
0.05 C
4X L
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
D
D1
87 65
0.20 C
A
B
2X
0.20 C
E1 E
1 2 34
TOP VIEW
c
A
SIDE VIEW DETAIL A
6X
e
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
4X
q
A1
C
SEATING
PLANE
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 −−− 0.05 0.000 −−− 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC
0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC
0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC
0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.65 0.80 0.95 0.026 0.032 0.037
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q
0 _ −−− 12 _
0 _ −−− 12 _
e/2
14
K
SOLDERING FOOTPRINT*
8X
0.42
PACKAGE
OUTLINE
0.65
4X
PITCH 0.66
E2
E3
M
85
G D2 L1
BOTTOM VIEW
0.75 0.57
3.60
2.30
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
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NTTFS4H07N

Power MOSFET ( Transistor )

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