Datasheet.kr   

FDD050N03B 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDD050N03B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FDD050N03B 자료 제공

부품번호 FDD050N03B 기능
기능 N-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDD050N03B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

FDD050N03B 데이터시트, 핀배열, 회로
March 2013
FDD050N03B
N-Channel PowerTrench® MOSFET
30 V, 90 A, 5.0 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• Fast Switching Speed
• Low Gate Charge, QG = 33 nC( Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
D
D
G
S
D-PAK
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
FDD050N03B
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
30
±16
90*
63*
50
360
72
2
65
0.43
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
FDD050N03B
2.3
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
www.fairchildsemi.com




FDD050N03B pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.1
1.5
1.0
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
400
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 25A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
100
100μs
10 Operation in This Area
is Limited by R DS(on)
1ms
10ms
100ms
1
0.1
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
1 10
VDS, Drain-Source Voltage [V]
50
80
60
40
Limited by Package
20
RθJC = 2.3 oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 11. Transient Thermal Response Curve
4
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 2.9oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
10 102
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
4
www.fairchildsemi.com

4페이지










FDD050N03B 전자부품, 판매, 대치품
Mechanical Dimensions
D-PAK
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
Dimensions in Millimeters
7 www.fairchildsemi.com

7페이지


구       성 총 8 페이지수
다운로드[ FDD050N03B.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDD050N03B

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵