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부품번호 | FDD050N03B 기능 |
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기능 | N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
March 2013
FDD050N03B
N-Channel PowerTrench® MOSFET
30 V, 90 A, 5.0 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• Fast Switching Speed
• Low Gate Charge, QG = 33 nC( Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
D
D
G
S
D-PAK
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
FDD050N03B
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
30
±16
90*
63*
50
360
72
2
65
0.43
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
FDD050N03B
2.3
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.1
1.5
1.0
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
400
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 25A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
100
100μs
10 Operation in This Area
is Limited by R DS(on)
1ms
10ms
100ms
1
0.1
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
1 10
VDS, Drain-Source Voltage [V]
50
80
60
40
Limited by Package
20
RθJC = 2.3 oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
Figure 11. Transient Thermal Response Curve
4
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 2.9oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
10 102
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
D-PAK
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
Dimensions in Millimeters
7 www.fairchildsemi.com
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD050N03B | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |